Influence of rf power on carbon nitride films prepared by rf magnetron sputtering

Liudi Jiang; A. G. Fitzgerald; M. J. Rose

doi:10.1117/12.408317

29 November 2000 Influence of rf power on carbon nitride films prepared by rf magnetron sputtering

Liudi Jiang, A. G. Fitzgerald, M. J. Rose

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408317
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Since (beta) -C₃N₄ has been predicted to be a superhard material with a higher hardness than diamond, many research groups have attempted to synthesize carbon nitride materials. We have prepared amorphous carbon nitride (a-C:N) films by rf magnetron sputtering of graphite with N₂ as the sputter gas. In this investigation, a series of film samples have been deposited at different rf power. AFM images have shown that the higher the rf power, the bigger the cluster size on the films and the rougher the surface of the films. By analyzing the results of our XPS experiments, we have found that with the decrease of the rf power, not only the incorporated nitrogen but also the concentration of sp³-bonded nitrogen in the films increased. We believe this is because f lower rf power results in smaller carbon clusters on the surface of the films, leading to larger carbon surface area. A larger film surface area makes it easier for the nitrogen to bond with carbon.

Citation Download Citation

Liudi Jiang, A. G. Fitzgerald, and M. J. Rose "Influence of rf power on carbon nitride films prepared by rf magnetron sputtering", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408317

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