LPE-grown high-quality InGaAsP/GaAs semiconductor lasers

Jinhua Yang; Xiaohua Wang; Zhonghui Li; Genzhu Wu; Xingde Zhang

doi:10.1117/12.408376

29 November 2000 LPE-grown high-quality InGaAsP/GaAs semiconductor lasers

Jinhua Yang, Xiaohua Wang, Zhonghui Li, Genzhu Wu, Xingde Zhang

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408376
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

High power InGaAsP/GaAs separate confinement heterostructure single quantum well lasers have been grown by liquid phase epitaxy (LPE). The maximum output power as high as 4 W has been obtained with the threshold current density 300 A/cm² and the external differential quantum efficiency 80%. Measurements and theoretical analysis showed that the wafers grown by LPE are in good agreement with design and can be comparable to that grown by MBE and MOCVD.

Citation Download Citation

Jinhua Yang, Xiaohua Wang, Zhonghui Li, Genzhu Wu, and Xingde Zhang "LPE-grown high-quality InGaAsP/GaAs semiconductor lasers", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408376

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available