Microwave-assisted reactive sputtering of aluminum oxynitrides

Francis Placido; Zhenhui Gou; Chris Rebecchi

doi:10.1117/12.408478

29 November 2000 Microwave-assisted reactive sputtering of aluminum oxynitrides

Francis Placido, Zhenhui Gou, Chris Rebecchi

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408478
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Aluminium oxynitride thin films have been produced by using a reactive dc magnetron sputtering system incorporating a microwave plasma to improve the ionization of the reactive gases. This allows films of high optical quality to be deposited at commercially acceptable deposition rates. A series of homogeneous films of aluminium oxynitride films covering the range of compositions from aluminium oxide to aluminium nitride have been prepared and their optical constants characterized over the wavelength range 300 nm to 1500 nm. As a demonstration of the stability and reproducibility of the system, some complex graded-index optical filters have been designed and fabricated using a simple control program based only on setting the gas flows and times for each layer. The experimental results are shown to agree very well with theoretical results based on the dispersive optical constants of the individual layers.

Citation Download Citation

Francis Placido, Zhenhui Gou, and Chris Rebecchi "Microwave-assisted reactive sputtering of aluminum oxynitrides", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408478

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