Paper
29 November 2000 Simulation of nucleation and initial growth of thin films on metal surface
Fengmin Wu, Yuanchun Liu, Xiongwei Wang, Ziqin Wu
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408466
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The atomic processes of nucleation and initial growth of thin films on metal surfaces are simulated by Monte Carlo method, using realistic growth model and physical parameters. The effects of adatoms evaporation from the substrate and diffusion along the edge of the islands are included in the simulation model. It is shown that the compact structure of Fe island grows on Fe(001) surface over the wide range of temperatures from 250 to 2000 K, which is consistent with the nucleation theory. The simulation results not only nicely reproduce the experiments of thin film growth at intermediate temperature, but also predict the growth situations of thin films at high temperature.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fengmin Wu, Yuanchun Liu, Xiongwei Wang, and Ziqin Wu "Simulation of nucleation and initial growth of thin films on metal surface", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408466
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KEYWORDS
Monte Carlo methods

Thin film growth

Diffusion

Thin films

Iron

Chemical species

Metals

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