Translator Disclaimer
Paper
15 December 2000 High-precision metal masking for multiple-wavelength laser diode fabrication using single-step-ion-implantation-induced quantum well intermixing
Author Affiliations +
Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406459
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada
Abstract
In this paper we report the development of a new and versatile ion implantation mask system which takes advantage of the high precision offered by recent deposition methods. A stack of alternate layers of two different materials which can be selectively etched is first deposited on the sample. Selective etching is then performed to remove a given number of layers from the stack in the various region of the sample. Owing to a high etching selectivity between the two materials, the thickness of the mask can be fixed very precisely in each region. During ion implantation, a different amount of ions will pass through the mask to reach the sample, according to mask thickness over each region. This method therefore provides a way to achieve a spatial control over the implantation dose, in a single implantation step. Thermal annealing can then be performed to induce quantum well intermixing in the underlying heterostructure, which brings about a blueshift of the emission wavelength. The results obtained with our method, which makes use of low energy ion implantation, for the fabrication ofsingle step graded blueshifting of InP/InGaAs/InGaAsP integrated laser heterostructures are presented. We also present a study of pairs of materials suitable for the mask fabrication, as well as the results of numerical simulations to determine the appropriate thickness ofthe mask layers.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vincent Aimez, Jacques Beauvais, Jean Beerens, and Boon Siew Ooi "High-precision metal masking for multiple-wavelength laser diode fabrication using single-step-ion-implantation-induced quantum well intermixing", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406459
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
Back to Top