High-quality photonic device fabrication using low-energy-ion-implantation-induced intermixing

Vincent Aimez; Jacques Beauvais; Jean Beerens; Hwi Siong Lim; Seng Lee Ng; Boon Siew Ooi

doi:10.1117/12.406460

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15 December 2000 High-quality photonic device fabrication using low-energy-ion-implantation-induced intermixing

Vincent Aimez, Jacques Beauvais, Jean Beerens, Hwi Siong Lim, Seng Lee Ng, Boon Siew Ooi

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Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406460
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada

Abstract

In this paper we show that low energy ion implantation of lnP based heterostructures for quantum well intermixing is a promising technique for photonic integrated devices. In order to fabricate complex optoelectronic devices with a control of the bandgap profile of the heterostructure there is a list of requirements that have to be fulfilled. We have fhhricatcd high quality discrete blueshifted laser diodes to verify the capability of low energy ion implantation induced intermixing fbr integration. We also fabricated extended cavity lasers with this technique, which demonstrated a reduction of the propagation losses down to 5.3 cm' within the integrated passive waveguides.

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Vincent Aimez, Jacques Beauvais, Jean Beerens, Hwi Siong Lim, Seng Lee Ng, and Boon Siew Ooi "High-quality photonic device fabrication using low-energy-ion-implantation-induced intermixing", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406460

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