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ZnSe/GaAs/GaAs heterostructures grown by Molecular Beam Epitaxy have been studied by Photoreflectance. From
Franz-Keldysh oscillations we found the electric fields at ZnSe. It was observed that the electric field value decreases with
the temperature. The calculated values (<58 kV/cm) are in agreement with the typical values in semiconductors and are
higher than those at the interfacial GaAs. The electric field strength is conelated with the presence of superficial states due to
defects such as dislocations.
Robert Charbonneau,Pierre Berini,Ezio Berolo, andEwa Lisicka-Skrzek
"Long-range plasmon-polariton wave propagation in thin metal films of finite width excited using an end-fire technique", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406449
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Robert Charbonneau, Pierre Berini, Ezio Berolo, Ewa Lisicka-Skrzek, "Long-range plasmon-polariton wave propagation in thin metal films of finite-width excited using an end-fire technique," Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406449