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15 December 2000 Multiple-channel InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low-energy-phosphorus-ion-implantation-induced intermixing
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Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406442
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada
Abstract
A new quantum-well intermixing process in InGaAs-InGaAsP structures, based on controlled low energy phosphorus (P) ion implantation, has been employed in the fabrication of multiple wavelength selective channel electroabsorption (EA) intensity modulators. These modulators, fabricated on a single chip, have an intensity modulation depth as high as -1 1 dB for voltage swings as low as -6 V.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seng Lee Ng, Hwi Siong Lim, Boon Siew Ooi, Yee Loy Lam, Yan Zhou, Yuen Chuen Chan, Vincent Aimez, Jacques Beauvais, and Jean Beerens "Multiple-channel InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low-energy-phosphorus-ion-implantation-induced intermixing", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406442
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