395-nm and 790-nm femtosecond laser ablation of aluminum-doped zinc oxide

Masayuki Okoshi; Kouji Higashikawa; Mitsugu Hanabusa

doi:10.1117/12.405719

6 November 2000 395-nm and 790-nm femtosecond laser ablation of aluminum-doped zinc oxide

Masayuki Okoshi, Kouji Higashikawa, Mitsugu Hanabusa

Proceedings Volume 4088, First International Symposium on Laser Precision Microfabrication; (2000) https://doi.org/10.1117/12.405719
Event: First International Symposium on Laser Precision Microfabrication (LPM2000), 2000, Omiya, Saitama, Japan

Abstract

We used 395-nm and 790-nm femtosecond laser pulses to deposit aluminum-doped zinc oxide films by pulsed laser deposition. Electrical resistivity of the films was lowered (5.6 x 10₄(Omega) cm) at 200 degree(s)C for the 395-nm laser pulses, while maintaining the optical transparency. In addition, the deposition rate increased six times. Optical emission was measured to compare the plumes generated by 395-nm and 790-nm laser pulses. We found that the emission from ions was suppressed relative to neutral atoms. Also the kinetic energy of ejected species was nearly doubled for the 395-nm laser pulses.

Citation Download Citation

Masayuki Okoshi, Kouji Higashikawa, and Mitsugu Hanabusa "395-nm and 790-nm femtosecond laser ablation of aluminum-doped zinc oxide", Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); https://doi.org/10.1117/12.405719

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