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6 November 2000 Applications of pulsed lasers in low-temperature thin film electronics fabrication
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Proceedings Volume 4088, First International Symposium on Laser Precision Microfabrication; (2000) https://doi.org/10.1117/12.405690
Event: First International Symposium on Laser Precision Microfabrication (LPM2000), 2000, Omiya, Saitama, Japan
Abstract
For the past several years, our group has focused on the development of polysilicon thin film transistor (TFT) processes having maximum allowable substrate temperatures between 100 degree(s) to 350 degree(s)C. These processes are based on excimer laser crystallization of low temperature deposited a-Si thin films combined with low temperature deposited dielectrics and self-aligned gate TFT structures. We have also developed a laser-based, source-drain-gate doping/annealing process. Typical n-channel TFT mobilities found are (mu) napproximately 150 cm2/V-s for the 100 degree(s)C process and approximately 400 cm2/V-s for the 350 degree(s)C process. In this paper we describe the basic processes and process physics. We then show results for TFTs fabricated at a variety of maximum substrate temperatures and a-Si deposition techniques.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas W. Sigmon, D. Toet, Paul G. Carey, Patrick M. Smith, and Paul Wickboldt "Applications of pulsed lasers in low-temperature thin film electronics fabrication", Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); https://doi.org/10.1117/12.405690
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