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6 November 2000 F2 laser ablation of GaN
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Proceedings Volume 4088, First International Symposium on Laser Precision Microfabrication; (2000) https://doi.org/10.1117/12.405691
Event: First International Symposium on Laser Precision Microfabrication (LPM2000), 2000, Omiya, Saitama, Japan
Abstract
F2 laser ablation etching of GaN has been demonstrated. The etching geometry, etching rate and microroughness were investigated, and compared to the case of KrF excimer laser ablation etching. The etching process is consisted of the ablation and hydrochloric acid treatment. Very sharp edge was found along the etched area. The microroughness of etched surface is reduced as the laser intensity increases. The f2 laser ablation of GaN is thought to be initiated by direct photoionization by single-7.9 eV photon absorption.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshimitsu Akane, Koji Sugioka, Shintaro Nomura, Kiyotaka Hammura, Kotaro Obata, Naoko Aoki, Koichi Toyoda, Yoshinobu Aoyagi, and Katsumi Midorikawa "F2 laser ablation of GaN", Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); https://doi.org/10.1117/12.405691
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