Paper
30 November 1983 The Evolution Of Metal Silicide Schottky Barrier Infrared Focal Plane Detectors
P. W. Pellegrini, F. D. Shepherd
Author Affiliations +
Proceedings Volume 0409, Technical Issues in Infrared Detectors and Arrays; (1983) https://doi.org/10.1117/12.935738
Event: 1983 Technical Symposium East, 1983, Arlington, United States
Abstract
Schottky barrier infrared detectors have made significant advances in the past several years. These have occurred on many fronts, and have resulted in focal planes which can image in the staring mode with more than 8000 active elements. Initial experimental results of the early 1970's were done with Palladium Silicide detectors. Images made from this material have a cutoff wavelength of about 3.5 micrometers and can adequately cover the near infrared bands with moderate quantum efficiency. In the mid to late 1970's, it was found that PtSi could be formed into infrared sensing arrays with a cutoff wavelength of about 4.7 micrometers. Unfortunately, the early arrays did not cover the region from 4.7 to 5.2 micrometers and suffered from rather low quantum efficiencies. Improvements in processing have overcome both of these initial difficiencies. In fact, PtSi arrays now have cutoff wavelengths of nearly 6.0 micrometers and moderate quantum efficiencies from 3.0 to 5.0 micrometers. They have been measured to be background limited at f/3 and have fixed pattern fingerprints of less than 0.3%. The minimum resolvable temperature at f/3 is less than 0.3°C. Our latest experiments have concentrated in IrSi detectors. These devices have cutoff wavelengths beyond 9.0 micrometers, and have excellent quantum yields in the 3.0 to 5.0 micro-meter region.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. W. Pellegrini and F. D. Shepherd "The Evolution Of Metal Silicide Schottky Barrier Infrared Focal Plane Detectors", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); https://doi.org/10.1117/12.935738
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Cited by 3 scholarly publications.
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KEYWORDS
Sensors

Quantum efficiency

Infrared detectors

Tolerancing

Diodes

Infrared sensors

Silicon

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