Effect of partial crystallization on formation of amorphous marks

Kenric P. Nelson; Orlando Lopez; Michael F. Ruane

doi:10.1117/12.399350

18 September 2000 Effect of partial crystallization on formation of amorphous marks

Kenric P. Nelson, Orlando Lopez, Michael F. Ruane

Proceedings Volume 4090, Optical Data Storage 2000; (2000) https://doi.org/10.1117/12.399350
Event: Optical Data Storage, 2000, Whistler, BC, Canada

Abstract

The reflectivity of an amorphous mark on a first-surface phase-change optical storage disk is shown to vary with the level of crystallization of the GST layer. A static tester with 680-nm laser diode for writing amorphous marks and a 643-nm laser diode for monitoring the reflectivity changes is used for the experiment. An 8% difference in reflectivity is measured between the amorphous marks formed in the fully crystallized, high reflectivity (R equals 43%) state and partially crystallized, low reflectivity (R equals 30%) state.

Citation Download Citation

Kenric P. Nelson, Orlando Lopez, and Michael F. Ruane "Effect of partial crystallization on formation of amorphous marks", Proc. SPIE 4090, Optical Data Storage 2000, (18 September 2000); https://doi.org/10.1117/12.399350

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