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19 October 2000 Spectral-sensitive on-chip masking of Si-PIN-diodes using patterned and self-blocked optical coatings
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Abstract
The manufacturing processes for spectral-sensitive on-chip masking of Si-PIN-diodes using thin-film optical filters are described. As two examples, a diode array with red, green, and blue filters (RGB) and a UV-sensitive diode are explained in detail. The RGB-filters are made of TiO2SiO2 thin-films and the UV-filter is a metal/dielectric multilayer using HfO2, SiO2, and Al thin-films. Both filter types are self-blocked over a wavelength range from 200 to 1100nm. The optical coatings on the diodes are arranged as pixels with rhombic or rectangular shapes and with a later dimensions of about 20 microns as minimum. The used lift-off technique for patterning the coatings is described briefly. Reactive e-beam evaporation with ion-assistance is used to deposit the optical coatings.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Uwe B. Schallenberg, Stefan Jakobs, and Wolfgang Buss "Spectral-sensitive on-chip masking of Si-PIN-diodes using patterned and self-blocked optical coatings", Proc. SPIE 4094, Optical and Infrared Thin Films, (19 October 2000); https://doi.org/10.1117/12.404753
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