Comparative study of the UV-optical and structural properties of SiO2, Al2O3, and HfO2 single layers deposited by reactive evaporation, ion-assisted deposition, and plasma-ion-assisted deposition

Roland Thielsch; Alexandre Gatto; Joerg Heber; Sven Martin; Norbert Kaiser

doi:10.1117/12.405294

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25 October 2000 Comparative study of the UV-optical and structural properties of SiO₂, Al₂O₃, and HfO₂ single layers deposited by reactive evaporation, ion-assisted deposition, and plasma-ion-assisted deposition

Roland Thielsch, Alexandre Gatto, Joerg Heber, Sven Martin, Norbert Kaiser

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Proceedings Volume 4102, Inorganic Optical Materials II; (2000) https://doi.org/10.1117/12.405294
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

In order to improve the degradation stability of dielectric mirrors for the use in UV-Free Electron Laser optical cavities a comparative study of the properties of SiO₂, Al₂O₃, and HfO₂ single layers was performed which was addressed to grow very dense films with minimum absorption in the spectral range from 200 nm to 300 nm. The films have been deposited by low loss reactive electron beam evaporation, by ion assisted deposition using a Mark II ion source, and by plasma ion assisted deposition using the APS source. Optical and structural properties of the samples have been studied by spectral photometry, infrared spectroscopy, x-ray diffraction and - reflectometry, as well as by investigation of the surface morphology. The interaction of UV radiation with photon energies close to the band gap was studied. For HfO₂ single layer, LIDT at 248 nm were determined in the 1-on-1 and the 1000-to-1 test mode in dependence on the deposition technology and the film thickness.

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Roland Thielsch, Alexandre Gatto, Joerg Heber, Sven Martin, and Norbert Kaiser "Comparative study of the UV-optical and structural properties of SiO₂, Al₂O₃, and HfO₂ single layers deposited by reactive evaporation, ion-assisted deposition, and plasma-ion-assisted deposition", Proc. SPIE 4102, Inorganic Optical Materials II, (25 October 2000); https://doi.org/10.1117/12.405294

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