XGA resolution full-video microdisplay using light-emitting polymers on a silicon active matrix circuit

Howard E. Abraham; Homer Antoniadis; Daniel B. Roitman; Kyle Frischknecht; Travis N. Blalock; Ken Nishimura; Thomas A. Knotts; Jeremy A. Theil; Chris Bright; Jeffrey N. Miller; Ronald L. Moon

doi:10.1117/12.416915

2 February 2001 XGA resolution full-video microdisplay using light-emitting polymers on a silicon active matrix circuit

Howard E. Abraham, Homer Antoniadis, Daniel B. Roitman, Kyle Frischknecht, Travis N. Blalock, Ken Nishimura, Thomas A. Knotts, Jeremy A. Theil, Chris Bright, Jeffrey N. Miller, Ronald L. Moon

Author Affiliations +

Proceedings Volume 4105, Organic Light-Emitting Materials and Devices IV; (2001) https://doi.org/10.1117/12.416915
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

Capable self-emissive polymers are being developed for use as emitting materials for a variety of display applications. This paper describes the use of standard CMOS integrated circuit silicon wafer technology along with a spin-cast polyfluorene-base polymer emissive layer, to demonstrate an XGA resolution, full video microdisplay. The silicon chip drive circuitry (Analog Pixel-APIX) is described along with results from our efforts to optimize the reflective anode, the semitransparent cathode process, and emissive cell construction. The 1024 X 768 pixel display achieves 200 Cd/m2 brightness at low power (<50 mW) with fast 1 usec response times. In addition, we summarize future directions to achieve color and the need to incorporate a production- worthy seal layer on microdisplays manufactured on silicon wafers.

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Howard E. Abraham, Homer Antoniadis, Daniel B. Roitman, Kyle Frischknecht, Travis N. Blalock, Ken Nishimura, Thomas A. Knotts, Jeremy A. Theil, Chris Bright, Jeffrey N. Miller, and Ronald L. Moon "XGA resolution full-video microdisplay using light-emitting polymers on a silicon active matrix circuit", Proc. SPIE 4105, Organic Light-Emitting Materials and Devices IV, (2 February 2001); https://doi.org/10.1117/12.416915

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