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2 February 2001 Zirconium-doped indium oxide thin films for organic light-emitting diodes
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Transparent and highly conducting zirconium-doped indium oxide (ZIO) thin films have been grown by pulsed laser deposition (PLD) on glass substrates without a post- deposition anneal. The structural, electrical and optical properties of these films were investigated as a function of film composition and substrate deposition temperature. Films were deposited using a KrF excimer laser (248 nm, 30 ns FWHM) at a fluence of 1 J/cm2 at growth temperatures ranging from 20 degrees Celsius to 400 degrees Celsius in oxygen pressure ranging from 1 mTorr to 25 mTorr. The films (approximately 2000 angstrom thick) deposited at 200 degrees Celsius in 25 mTorr of oxygen show electrical resistivities as low as 2.7 X 10-4 (Omega) -cm, the average visible transmittance of 89%, the refractive index of 1.99 and optical band gap of 4.1 eV. These ZIO films were used as a transparent anode contact in organic light emitting diodes (OLEDs) and the device performance was studied. The external quantum efficiency measured at 100 A/m2 for the [ZIO/TPD/Alq3/MgAg] diodes was about 0.9%. Low driving voltage and high light emission were observed for the OLEDs with the ZIO anode.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heungsoo Kim, James S. Horwitz, Gary P. Kushto, Syen B. Qadri, Zakya H. Kafafi, and Douglas B. Chrisey "Zirconium-doped indium oxide thin films for organic light-emitting diodes", Proc. SPIE 4105, Organic Light-Emitting Materials and Devices IV, (2 February 2001);

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