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18 December 2000 Sb-heterostructure zero-bias diodes for direct detection beyond 100 GHz
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We have developed a new kind of millimeter wave diode for zero-bias detection up to and beyond 100GHz. The diode is based on the InAs/GaSb/AlSb heterostructure, which has a staggered Type II band gap alignment in which the conduction band of the InAs is lower in energy than the GaSb valence band edge. This produces a built-in asymmetry which produces a high zero bias nonlinearity in the current-voltage characteristic. The heterostructure is a relatively simple one that is reliably and reproducibly grown using standard molecular beam epitaxy techniques. The diodes we have fabricated demonstrate that this is a new and superior solution as compared with its predecessors, the Ge backward diode and the planar doped barrier diode, for detection and mixing of small input power-level signals without the added complexity of DC bias or local oscillator.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joel N. Schulman, David H. Chow, Edward T. Croke, Carl W. Pobanz, Howard L. Dunlap, and C. D. Haeussler "Sb-heterostructure zero-bias diodes for direct detection beyond 100 GHz", Proc. SPIE 4111, Terahertz and Gigahertz Electronics and Photonics II, (18 December 2000);

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