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15 December 2000 Advanced InGaAs detectors on GaAs substrates
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The performance of uncooled InxGa1-xAs photovoltaic devices operating in the 2-3.6 micrometers spectral range has been studied both theoretically and experimentally. Various multilayer homo- and heterojunction devices have been considered. Band-to-band Auger processes were taken into account as the dominant mechanisms of thermal generation and recombination. Calculations show that the best performance can be obtained in devices with lightly doped n-type absorber region as a result of the significant role of Auger S (spin-off band) process. The optimized heterostructures with near intrinsic n-type narrow gap InGaAs absorber were grown using molecular beam epitaxy. The performance of the present InGaAs devices remains significantly below theoretical limits. Better agreement can be observed for devices with longer cutoff wavelength as the result of increasing role of fundamental limitations and improved quality of materials with x approximately equal to 1. Improvement of performance by almost an order of magnitude has been achieved by the use of monolithic optical immersion. This has been accomplished by growth of the InGaAs heterostructures on thick SI GaAs substrates and by formation of the immersion lenses directly in the substrate. These devices are expected to find important applications in infrared systems which require better performance than existing uncooled detectors.
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Janusz Kaniewski, Zbigniew Orman, Jozef Piotrowski, Kazimierz Reginski, and Mariusz Romanis "Advanced InGaAs detectors on GaAs substrates", Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000);

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