Paper
15 December 2000 Development of quantum well infrared photodetectors in France
Author Affiliations +
Abstract
Standard GaAs/AlGaAs QWIPs are now well established for LWIR detection. The main advantage of this technology is the duality with the technology of commercial GaAs devices. The second advantage widely claimed for QWIPs is the so-called band-gap engineering, allowing the custom design of the quantum structure to fulfill the requirements of specific applications such as multispectral detection. QWIPS are close to being optimized. The understanding of detection mechanisms has led to high performance QWIPs working at high temperature (above 77 K). However, as with all quantum detectors, the operating temperature of QWIPs is limited by the thermal current. A new skimmed architecture accommodating this offset has already been demonstrated. The optimization of a skimmed structure requires the modeling procedures and the process, to be adapted. We present the current status of QWIPs in France, including the latest performances achieved with both standard and skimmed architectures. We illustrate the development of our QWIPs by recent results on FPAs.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric M. Costard, Philippe Francis Bois, Xavier Marcadet, Eric Herniou, Philippe M. Tribolet, and Michel Vuillermet "Development of quantum well infrared photodetectors in France", Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); https://doi.org/10.1117/12.409887
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Cited by 2 scholarly publications.
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KEYWORDS
Quantum well infrared photodetectors

Sensors

Long wavelength infrared

Diffraction gratings

Thermography

Staring arrays

Capacitors

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