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15 December 2000 Noncryogenic quantum detection in the mid-IR using InAsSb photovoltaic structures
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We describe a mid-IR photovoltaic detector using InAsSb as active material, grown by MBE on a GaSb substrate. The purpose of this study is to show that quantum detectors can offer an alternative to thermal detectors (pyroelectric or resistive bolometers) for high temperature (near room temperature) operation. With a 9% Sb content, InAsSb is lattice matched to GaSb and thus provides an excellent material quality, with Shockley-Read lifetimes of the order of 200 ns as measured by photoconductive gain measurements as well as time resolved photoconductivity experiments. The band gap of InAsSb corresponds to a wavelength of 5 microns at room temperature. This makes InAsSb an ideal candidate for room temperature detection in the 3-5 microns atmospheric window. Photovoltaic structures are characterized by current voltage characteristics as a function of temperature. Using the absorption value obtained on the test samples, a detectivity of 7X109 Jones at 3.5 micrometers is estimated at a temperature of 250 K, which can easily be reached with Peltier cooling. Considering the photovoltaic spectrum, this leads to a NETD lower than 80 mK.
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Anna Rakovska, Vincent Berger, Xavier Marcadet, Genevieve Glastre, and Borge Vinter "Noncryogenic quantum detection in the mid-IR using InAsSb photovoltaic structures", Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000);

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