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15 December 2000 Performance of 320 x 240 uncooled IRFPA with SOI diode detectors
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We reported a 320 x 240 uncooled IRFPA with 40 micrometers pitch having diode detectors fabricated on an SOI wafer. Since the fabrication process of the SOI diode detector is compatible with the silicon IC process, only a silicon IC fab is necessary for manufacture of the FPAs. This enables mass production of low cost uncooled FPAs. This paper focuses on the performance of the FPA. In the previous paper, we proposed a novel infrared absorbing structure which offers a very high fill factor. Although this structure exhibited a high infrared absorption because of interference absorbing components incorporated in the structure, large thermal capacitance was an issue. Thus we have improved the infrared absorbing structure in the newly developed FPA. The improved absorbing structure has been devised making use of reflection of metal interconnections including diode metal straps. A thermal time constant of 17 msec has been achieved without degrading the responsivity compared with the conventional absorbing structure.
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Tomohiro Ishikawa, Masashi Ueno, Yoshiyuki Nakaki, Kazuyo Endo, Yasuaki Ohta, Junji Nakanishi, Yasuhiro Kosasayama, Hirofumi Yagi, Takanori Sone, and Masafumi Kimata "Performance of 320 x 240 uncooled IRFPA with SOI diode detectors", Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000);

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