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21 November 2000 Room-temperature x- and gamma-ray spectroscopy with silicon drift detectors
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Abstract
Silicon Drift Detectors (SDDs) with integrated readout transistors combine a large sensitive area with a small total readnode capacitance and are therefore well suited for high resolution, high count rate X-ray spectroscopy. The low leakage current level obtained by elaborated process technology makes it possible to operate them at room temperature or with moderate thermo-electric cooling. The monolithic combination of several SDDs to a multichannel drift detector solves the limited of size and allows for the realization of new physics experiments and systems. Up to 3 cm2 large SDDs for spectroscopic applications were fabricated and tested. Position sensitive X-ray systems are introduced. The description of the device principle is followed by the introduction of the multichannel drift detector concept. Layout, performance and examples of current and future applications are presented.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lothar Strueder, Robert Hartmann, S. Kemmer, Norbert Krause, Diana Stoetter, Gerhard Lutz, P. Solc, Peter Holl, Peter Lechner, Paolo Leutenegger, Josef Kemmer, Heike Soltau, R. Stoetter, Ulrich Weber, Andrea Castoldi, Carlo Fiorini, Emilio Gatti, Chiara Guazzoni, Antonio Longoni, and Marco Sampietro "Room-temperature x- and gamma-ray spectroscopy with silicon drift detectors", Proc. SPIE 4141, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II, (21 November 2000); https://doi.org/10.1117/12.407602
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