Progress in carbon nitride synthesis by pulsed-laser deposition

ZhongMin Ren; Yongfeng Lu; Z. F. He

doi:10.1117/12.413764

30 January 2001 Progress in carbon nitride synthesis by pulsed-laser deposition

ZhongMin Ren, Yongfeng Lu, Z. F. He

Proceedings Volume 4157, Laser-Assisted Microtechnology 2000; (2001) https://doi.org/10.1117/12.413764
Event: Laser-Assisted Microtechnology 2000, 2000, St. Petersburg-Pushkin, Russian Federation

Abstract

Synthesis of carbon nitride has been an important topic in materials science since 1993. Ion-assisted pulsed laser deposition is proven to be a good method to deposit carbon nitride thin films. Both amorphous and crystal (beta) -C₃N₄ layers can be deposited on many substrates. A standard experimental set-up comprises a pulsed KrF excimer laser that is used to ablate the graphite target and a nitrogen ion beam bombarding simultaneously on the substrate. A variety of experimental derivatives have been developed based on pulsed laser deposition. The deposited thin films have been characterized by Auger Electron Spectroscope, X-ray photoelectron spectroscopy, mass time of flight spectrum, optical emission spectrum, Rutherford backscattering, high energy backscattering, Raman spectroscopy, Fourier transform IR spectroscopy, Ellipsometry, electron diffraction, scanning tunneling microscope and atomic force microscope. Investigations are carried out to identify the binding structure, nitrogen content, electronic properties, optical properties and crystal structures of the deposited thin films.

Citation Download Citation

ZhongMin Ren, Yongfeng Lu, and Z. F. He "Progress in carbon nitride synthesis by pulsed-laser deposition", Proc. SPIE 4157, Laser-Assisted Microtechnology 2000, (30 January 2001); https://doi.org/10.1117/12.413764

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