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11 August 2000 Passive alignment and its application in multilevel x-ray lithography
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Proceedings Volume 4175, Materials and Device Characterization in Micromachining III; (2000) https://doi.org/10.1117/12.395611
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States
Abstract
Many MEMS applications require multi-level microstructures in which two or more levels have to be aligned to each other in the processing. In this paper a passive alignment system based on a mechanical registration method utilizing reference posts is described. A detailed analysis of the test results was conducted to reveal main error sources and estimate the accuracy of this alignment method. An alignment accuracy of +/- 5(mu) m between 2 layers has been achieved. The further work on improving the alignment accuracy and expending in this alignment method to graphite masks for multi-level X-ray or combined optical/x-ray lithography is proposed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhong Geng Ling, Kun Lian, and Jost Goettert "Passive alignment and its application in multilevel x-ray lithography", Proc. SPIE 4175, Materials and Device Characterization in Micromachining III, (11 August 2000); https://doi.org/10.1117/12.395611
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