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18 August 2000 Low-energy neutral processing and process characterization
Xianmin Tang, Dennis M. Manos, Qi Wang, Chris A. Nichols
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Proceedings Volume 4181, Challenges in Process Integration and Device Technology; (2000) https://doi.org/10.1117/12.395746
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States
Abstract
The purpose of this paper is to present a novel charge-free processing method which could be integrated for future generation feature production. The source reported here is a surface- reflection neutralization based inductively coupled plasma sources. Experiments and simulations how that his source can produce enough low energy fast neutrals for ashing applications. The cleaning efficiency and stripping rates are characterized as a function of operating parameters. Measurements using a heat flux and momentum analyzer show the neutral flux is on the order 1015 cm-2s-1 and the neutral energy is tunable between 3-6 eV. Process damage assessment by various plasma processes, such as continuous vs. pulsed plasmas, has been included in this paper. These results demonstrate this source is promising for development soft-landing steps suitable for fragile features.
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Xianmin Tang, Dennis M. Manos, Qi Wang, and Chris A. Nichols "Low-energy neutral processing and process characterization", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395746
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KEYWORDS
Plasma
Heat flux
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