Subwavelength optical lithography

Tsuneo Terasawa

doi:10.1117/12.395721

18 August 2000 Subwavelength optical lithography

Tsuneo Terasawa

Proceedings Volume 4181, Challenges in Process Integration and Device Technology; (2000) https://doi.org/10.1117/12.395721
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

Production of fine features is vital for increasing integration degree of ultra-large scale integrated (ULSI) devices. Although optical lithography has been widely used for mass-production of ULSIs, the conventional method which utilize large numerical aperture lens and short wavelength exposure is limited by lens manufacturing and narrow depth of focus. To overcome this limit, several resolution enhancement techniques (RETs) have been required and proposed. The RETs include various types of phase shift mask, off-axis illumination, the pupil filtering techniques, and associated techniques. Optical proximity effect correction technique has also been developed to apply these RETs effectively, especially in the sub-wavelength optical lithography. This paper introduces typical RETs with potential and discusses the imaging characteristics of those techniques comparing with conventional binary mask technique.

Citation Download Citation

Tsuneo Terasawa "Subwavelength optical lithography", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395721

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