Deep-ultraviolet scatterometry for nanoparticle detection

Benjamin D. Buckner; E. Dan Hirleman

doi:10.1117/12.410083

23 August 2000 Deep-ultraviolet scatterometry for nanoparticle detection

Benjamin D. Buckner, E. Dan Hirleman

Proceedings Volume 4182, Process Control and Diagnostics; (2000) https://doi.org/10.1117/12.410083
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

The detection of surface particles is an important part of contamination control in semiconductor manufacturing. However, the minimum particle size required to be detected has been becoming smaller as integrated-circuit geometries shrink. Current visible-light detection systems can detect particles down to around 50 nm in polystyrene-latex-equivalent size and so are adequate for current geometries, but in the near future even particles as small as around 20 nm in diameter will become significant contaminants. This is beyond the capability of current visible-light scanners, but previous work has shown that deep UV scattering by such particles should be sufficient to enable their detection. Consequently, we have constructed a deep/vacuum UV scatterometer capable of measuring scattering from semiconductor samples.

Citation Download Citation

Benjamin D. Buckner and E. Dan Hirleman "Deep-ultraviolet scatterometry for nanoparticle detection", Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); https://doi.org/10.1117/12.410083

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