Translator Disclaimer
Paper
22 January 2001 157-nm photomask handling and infrastructure: requirements and feasibility
Author Affiliations +
Abstract
Photomask handling is significantly more challenging for 157nm lithography than for any previous generation of optical lithography. First, pellicle materials are not currently available which meet the requirements for 157nm lithography. Polymeric materials used at 193nm and above are not sufficiently transmissive at 157nm, while modified fused silica materials have adequate transmission properties but introduce optical distortion.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerry Cullins and Edward G. Muzio "157-nm photomask handling and infrastructure: requirements and feasibility", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410756
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Development of hard pellicle for 157 nm
Proceedings of SPIE (August 01 2002)
Challenges and opportunities for 157-nm mask technology
Proceedings of SPIE (December 30 1999)
Contamination control for ArF photo masks
Proceedings of SPIE (May 27 2009)
157 nm lithography for 100 nm generation and beyond ...
Proceedings of SPIE (January 22 2001)
Current status of 157-nm mask technology development
Proceedings of SPIE (July 19 2000)

Back to Top