Defect printability modeling of smoothed substrate defects for EUV lithography

Avijit K. Ray-Chaudhuri; Aaron Fisher; Eric M. Gullikson

doi:10.1117/12.410676

22 January 2001 Defect printability modeling of smoothed substrate defects for EUV lithography

Avijit K. Ray-Chaudhuri, Aaron Fisher, Eric M. Gullikson

Author Affiliations +

Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410676
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

In Extreme Ultraviolet (EUV) lithography, sub-resolution reticle substrate defects which are overcoated during the multilayer coating process could introduce proximity phase errors. A strategy for mitigating this problem is to coat the substrate with a smoothing layer prior to ML deposition. A spherical defect will be reduced to a low aspect Gaussian bump. In order to understand the smoothing requirements necessary to render a defect non-critical, we have utilized a simplified 3-D lithographic modeling approach to study the effect of a Gaussian bump in proximity to both 70 nm 1:3 L/S and 35 nm 1:3 L/S printed with a 0.1 and 0.25 numerical aperture system, respectively. The results quantify that the smoothing approach can be successfully used to render a defect non-critical by two means: 1) reducing the defect volume or 2) by reducing the slope of the Gaussian bump.

Citation Download Citation

Avijit K. Ray-Chaudhuri, Aaron Fisher, and Eric M. Gullikson "Defect printability modeling of smoothed substrate defects for EUV lithography", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410676

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