Development of simplified process for KrF excimer halftone mask with chrome-shielding method: II

Shinji Kobayashi; Kunio Watanabe; Kiyochige Ohmori

doi:10.1117/12.410761

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22 January 2001 Development of simplified process for KrF excimer halftone mask with chrome-shielding method: II

Shinji Kobayashi, Kunio Watanabe, Kiyochige Ohmori

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Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410761
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

A new simplified process is developed successfully for KrF excimer half-tone mask with chrome shielding method. It is useful for shortening process time of half-tone mask with two layers of chrome and half-tone film. We reported a simplified process in BACUS99. The old simplified process had problems in the stability of ashing rate and the resolution of chrome etching. The instability of ashing rate causes mask defects. And the enhancement of resolution is required for small hole patterns in the case of 4X scanner compared with 5X stepper. In the new simplified process, the stability of ashing rate is achieved by the change of etching sequence, and the resolution is enhanced by optimizing chrome etching conditions. It is confirmed in this paper that the half-tone masks fabricated by the new simplified process have mask quality and optical capability which are required in fabrication of devices for 0.15um generation.

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Shinji Kobayashi, Kunio Watanabe, and Kiyochige Ohmori "Development of simplified process for KrF excimer halftone mask with chrome-shielding method: II", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410761

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