Double-step process for manufacturing reticle to reduce gate CD variation

Makoto Kozuma; Masaya Komatsu; Rieko Arakawa; Seiji Kubo; Tatsuya Takahashi; John Jensen; Hyun-Suk Bang; Il-Ho Lee; Cheol Shin; Hong-Seok Kim; Keun-Won Park

doi:10.1117/12.410759

22 January 2001 Double-step process for manufacturing reticle to reduce gate CD variation

Makoto Kozuma, Masaya Komatsu, Rieko Arakawa, Seiji Kubo, Tatsuya Takahashi, John Jensen, Hyun-Suk Bang, Il-Ho Lee, Cheol Shin, Hong-Seok Kim, Keun-Won Park

Author Affiliations +

Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410759
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

In low k1 lithography, reticle quality decides the process capability. Therefore, we must minimize CD errors on the reticle plate. Double Step process (DS process) is a unique method to improve CD uniformity of line patterns on the active region of poly layer reticle. In DS process, poly layer design is divided into the active region and the non-active region. And then, these two regions are processed individually. By using this procedure, pattern density variation across the reticle plate is reduced when making line patterns on the active region. As a result, the loading effect of the dry etching process reduced, and CD uniformity of these patterns can be improved. Using this technique of reticle fabrication, CD uniformity could be improved. Particularly, the range of CD variation of line patterns in logic cells was drastically reduced from 29nm to 20nm.

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Makoto Kozuma, Masaya Komatsu, Rieko Arakawa, Seiji Kubo, Tatsuya Takahashi, John Jensen, Hyun-Suk Bang, Il-Ho Lee, Cheol Shin, Hong-Seok Kim, and Keun-Won Park "Double-step process for manufacturing reticle to reduce gate CD variation", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410759

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