Evaluation of loading effect of NLD dry etching: II

Tatsuya Fujisawa; Takayuki Iwamatsu; Koji Hiruta; Hiroaki Morimoto; Noriyuki Harashima; Takaei Sasaki; Mutsumi Hara; Kazuhide Yamashiro; Yasushi Okubo; Yoichi Takehana

doi:10.1117/12.410736

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22 January 2001 Evaluation of loading effect of NLD dry etching: II

Tatsuya Fujisawa, Takayuki Iwamatsu, Koji Hiruta, Hiroaki Morimoto, Noriyuki Harashima, Takaei Sasaki, Mutsumi Hara, Kazuhide Yamashiro, Yasushi Okubo, Yoichi Takehana

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Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410736
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

The dry etching process by using NLD (Neutral Loop Discharge Plasma) has been evaluated. The loading effect was measured applying the CAR (Chemically Amplified Resist) negative resist process in the low pressure etching condition, where an excellent CD (Critical Dimension) uniformity was obtained.

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Tatsuya Fujisawa, Takayuki Iwamatsu, Koji Hiruta, Hiroaki Morimoto, Noriyuki Harashima, Takaei Sasaki, Mutsumi Hara, Kazuhide Yamashiro, Yasushi Okubo, and Yoichi Takehana "Evaluation of loading effect of NLD dry etching: II", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410736

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