Fabrication process and transmission characteristics of SCALPEL mask blanks with thin SiNx membranes

Sang-In Han; Pawitter J. S. Mangat; William J. Dauksher; Michael Chor; James Alexander Liddle; Anthony E. Novembre

doi:10.1117/12.410751

22 January 2001 Fabrication process and transmission characteristics of SCALPEL mask blanks with thin SiN_x membranes

Sang-In Han, Pawitter J. S. Mangat, William J. Dauksher, Michael Chor, James Alexander Liddle, Anthony E. Novembre

Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410751
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

The SCALPEL® (Scattering with Angular Limitation Projection Electron Beam Lithography) mask technology is based on the electron-scattering properties of the patterned scatterer film present on the thin membrane material in conjunction with an aperture in the back focal plane of the projection optics of the exposure tool. Thus, the membrane material that supports the scatterer patterns should be highly transmissive, leading to more efficient utilization of source energy and reduced thermal management demands in the system, particularly in the areas above the mask. However, the fabrication of SCALPEL masks with thin membranes has been one of the most key challenges in process development. Even though 100-nm thick SiNx is currently employed as the standard thickness for SCALPEL masks, there has been a drive to explore the membrane yield for thinner SiNx films. Through optimization of the LPCVD SiNx process, we have demonstrated the fabrication of SCALPEL mask membranes with approximately 50nm thick SiNx with a repeatable yield. The measured experimental electron transmission data agrees well with the calculation from a theoretical model.

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Sang-In Han, Pawitter J. S. Mangat, William J. Dauksher, Michael Chor, James Alexander Liddle, and Anthony E. Novembre "Fabrication process and transmission characteristics of SCALPEL mask blanks with thin SiN_x membranes", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410751

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KEYWORDS

Etching

Photomasks

Charged-particle lithography

Silicon

Semiconducting wafers

Refraction

Silicon films

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