Proximity effects in alternating aperture phase-shifting masks

Christophe Pierrat

doi:10.1117/12.410709

22 January 2001 Proximity effects in alternating aperture phase-shifting masks

Christophe Pierrat

Author Affiliations +

Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410709
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

This paper investigates proximity effect correction methodologies for alternating aperture phase-shifting masks. A simple approximation is used to investigate the proximity effects: at low sigma, the aerial image intensity on the wafer can be calculated by taking the square of the sum of the amplitudes of each pattern on the mask taken separately. Results show that proximity effects are mainly driven by low sigma illumination and that correcting chrome patterns is less efficient than modifying the diffraction of the patterns by changing the shape of the phase-shifting regions.

Citation Download Citation

Christophe Pierrat "Proximity effects in alternating aperture phase-shifting masks", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410709

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