Realization of mass production for 130-nm node and future applicatiton for high transmission using ZrSi-based attenuated phase-shift mask in ArF lithography

Toshihiro Ii; Tadashi Saga; Yusuke Hattori; Takashi Ohshima; Masao Otaki; Masahide Iwakata; Takashi Haraguchi; Koichiro Kanayama; Tsukasa Yamazaki; Nobuhiko Fukuhara; Tadashi Matsuo

doi:10.1117/12.410706

22 January 2001 Realization of mass production for 130-nm node and future applicatiton for high transmission using ZrSi-based attenuated phase-shift mask in ArF lithography

Toshihiro Ii, Tadashi Saga, Yusuke Hattori, Takashi Ohshima, Masao Otaki, Masahide Iwakata, Takashi Haraguchi, Koichiro Kanayama, Tsukasa Yamazaki, Nobuhiko Fukuhara, Tadashi Matsuo

Author Affiliations +

Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410706
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

Attenuated phase shifting mask (att-PSM) is one of the key technologies for 130 nm and below device fabrication. We have proposed zirconium silicon oxide (ZrSiO) as a suitable material for next-generation att-PSM material. Through our optimization process both for film deposition and dry etching condition, we confirmed that we could control its phase shift and transmittance precisely. Because of its low film stress, we could neglect registration degradation. From its excellent spectral property, we can apply currently available defect inspection systems. Defect repair is easily performed by gas assisted etching. Further, we were successful to make high-transmittance material (16 %) at ArF laser source even keeping inspectability.

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Toshihiro Ii, Tadashi Saga, Yusuke Hattori, Takashi Ohshima, Masao Otaki, Masahide Iwakata, Takashi Haraguchi, Koichiro Kanayama, Tsukasa Yamazaki, Nobuhiko Fukuhara, and Tadashi Matsuo "Realization of mass production for 130-nm node and future applicatiton for high transmission using ZrSi-based attenuated phase-shift mask in ArF lithography", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410706

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