Effects of the variations of oxide structure on the electrical and optical properties of ITO films

Ling Fang; Daming Zhuang; Jihong Zhang; Jiajun Liu

doi:10.1117/12.401723

3 October 2000 Effects of the variations of oxide structure on the electrical and optical properties of ITO films

Ling Fang, Daming Zhuang, Jihong Zhang, Jiajun Liu

Proceedings Volume 4220, Advanced Photonic Sensors: Technology and Applications; (2000) https://doi.org/10.1117/12.401723
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China

Abstract

In the paper, conductive and transparent indium tin oxide (ITO) films have been prepared by reactive magnetron sputtering using powder target of In₂O₃ with 10wt% SnO₂ in an Ar/O₂ atmosphere. The structural, composition, optical and electrical properties of the films deposited at different substrate temperature (150 approximately 350 degrees Celsius) have been investigated. Some interesting results obtained in this work, which might be somewhat new, are that the variations of oxide structure and concentration greatly influence the electrical properties of ITO films. X-ray diffraction patterns and X-ray photoelectron spectroscopy (XPS) show that the films deposited at substrate temperature 250 degrees Celsius or more are consist of In₂SnO₅ and In₂O₃ with no Sn₃O₄. When substrate temperature is lowered to 150 degrees Celsius, Sn₃O₄ occurs besides In₂O₃ in the films. The above result indicates the occurrence of Sn₃O₄ is unfavorable to the conductive properties. When substrate temperature is increased, Sn₃O₄ disappears, and oxygen vacancy and the electron donor Sn⁺⁴ concentration are increase, which result in a great improvement of the electrical and optical properties.

Citation Download Citation

Ling Fang, Daming Zhuang, Jihong Zhang, and Jiajun Liu "Effects of the variations of oxide structure on the electrical and optical properties of ITO films", Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); https://doi.org/10.1117/12.401723

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