Epitaxial CoSi2 on Si(100) by oxide-mediated epitaxy

Mark William Kleinschmit; Mark Yeadon; J. Murray Gibson

doi:10.1117/12.405377

24 October 2000 Epitaxial CoSi₂ on Si(100) by oxide-mediated epitaxy

Mark William Kleinschmit, Mark Yeadon, J. Murray Gibson

Proceedings Volume 4227, Advanced Microelectronic Processing Techniques; (2000) https://doi.org/10.1117/12.405377
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

Oxide mediated epitaxy and related techniques have shown promise as candidates for the production of high quality epitaxial CoSi₂ on Si(001). The mechanisms governing the success of these techniques are still not clear, however. We present microstructural observations of the formation of CoSi₂ on both the clean and oxidized Si(001) surface. Our observations were made using a UHV transmission electron microscope with in-situ MBE capability.

Citation Download Citation

Mark William Kleinschmit, Mark Yeadon, and J. Murray Gibson "Epitaxial CoSi₂ on Si(100) by oxide-mediated epitaxy", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405377

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available