Empirical model of effective channel length (Leff) for 0.25-um LDD nMOSFET

Po-Ching Liu; H. Lin

doi:10.1117/12.405419

24 October 2000 Empirical model of effective channel length (L_eff) for 0.25-μm LDD nMOSFET

Po-Ching Liu, H. Lin

Proceedings Volume 4228, Design, Modeling, and Simulation in Microelectronics; (2000) https://doi.org/10.1117/12.405419
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

xThe definition of effective channel length (L_eff) is different from the metallurgical junction length (L_met), or mask length (L_mask) for lightly-doped-drain (LDD) nMOS devices. Based on the measured data for 0.25 micrometers nMOSFET, an empirical expression on the deviation of effective channel resistance under GCA condition, namely V_DS << V_GS. BY measuring the channel resistance versus different mask lengths under differential variation of gate voltage V_GS, and (Delta) L_eff can be determined. The result predicts that under high gate voltage, a larger portion of gate overlapping region contributes to the conducing effective channel length.

Citation Download Citation

Po-Ching Liu and H. Lin "Empirical model of effective channel length (L_eff) for 0.25-μm LDD nMOSFET", Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); https://doi.org/10.1117/12.405419

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available