Dependence of EM performance on linewidth for Cu dual-inlaid structures

Larry Zhao; Cristiano Capasso; Amit P. Marathe; Stacye R. Thrasher; Richard Hernandez; Peggy Mulski; Stewart Rose; Timothy Nguyen; Martin Gall; Hisao Kawasaki

doi:10.1117/12.404883

23 October 2000 Dependence of EM performance on linewidth for Cu dual-inlaid structures

Larry Zhao, Cristiano Capasso, Amit P. Marathe, Stacye R. Thrasher, Richard Hernandez, Peggy Mulski, Stewart Rose, Timothy Nguyen, Martin Gall, Hisao Kawasaki

Author Affiliations +

Proceedings Volume 4229, Microelectronic Yield, Reliability, and Advanced Packaging; (2000) https://doi.org/10.1117/12.404883
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

EM is a diffusion phenomenon under the influence of driving forces. The major diffusion paths for Cu dual inlaid structures are believed to be interfaces and grain boundaries. Cu dual inlaid structures usually have a refractory metal barrier layer and are capped with a dielectric layer. The fastest diffusion path in such a structure is believed to be the Cu-dielectric interface. We studied the relationship between EM behavior and metal line- width for two types of EM test structures. It was found that the median time to failure (MTTF) increased significantly as the metal line-width increased for each type of structures when tested under the same current density. In one case, the MTTF increased by 200 percent as the metal line-width was doubled. Microstructure analysis on the metal lines showed that the wider lines had almost a bamboo structure while the narrower lines consisted of small grains. Therefore, the dramatic decrease in MTTF in the narrower line structure was most likely due to a significant increase in grain boundary diffusion. Mathematical treatment has been performed on the experimental data based on the assumption that the MTTF is reciprocally proportional to the drift velocity or the diffusivity, in this case, of Cu. It has been concluded that grain boundaries can be the fastest diffusion path in Cu dual inlaid structures when the grain size is small.

Citation Download Citation

Larry Zhao, Cristiano Capasso, Amit P. Marathe, Stacye R. Thrasher, Richard Hernandez, Peggy Mulski, Stewart Rose, Timothy Nguyen, Martin Gall, and Hisao Kawasaki "Dependence of EM performance on linewidth for Cu dual-inlaid structures", Proc. SPIE 4229, Microelectronic Yield, Reliability, and Advanced Packaging, (23 October 2000); https://doi.org/10.1117/12.404883

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available