Paper
4 October 2000 Liquid phase epitaxial growth and characterization of Nd:YAG/YAG structures for thin-film lasers
Jerzy Sarnecki, Michal Malinowski, Jerzy Skwarcz, Ryszard Jablonski, Krystyna Mazur, Dariusz Litwin, Jerzy Sass
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Abstract
Liquid phase epitaxy (LPE) is a suitable technique to produce diode laser-pumped solid state lasers with a planar waveguide structure. The thin films of Nd3+, Ga3+ and Lu3+ doped YAG have been grown form a supercooled molten garnet-flux high temperature solution on undoped YAG substrates by the standard LPE dipping technique. The emission spectra and fluorescence lifetimes have been measured for Nd:YAG layers with different concentration of Nd3+ ions. Additionally, the films were investigated versus concentration of neodymium, gallium and lutetium using ESR, x-ray diffraction and micro interferometric techniques. According to above measurements it can be concluded that the obtained epitaxial structures are of good quality.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerzy Sarnecki, Michal Malinowski, Jerzy Skwarcz, Ryszard Jablonski, Krystyna Mazur, Dariusz Litwin, and Jerzy Sass "Liquid phase epitaxial growth and characterization of Nd:YAG/YAG structures for thin-film lasers", Proc. SPIE 4237, Laser Technology VI: Progress in Lasers, (4 October 2000); https://doi.org/10.1117/12.402860
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Cited by 6 scholarly publications.
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KEYWORDS
Nd:YAG lasers

YAG lasers

Liquid phase epitaxy

Ions

Neodymium

Thin films

Refractive index

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