GaN etching by simultaneous irradiation of KrF excimer laser and F2 laser

Toshimitsu Akane; Koji Sugioka; Kotaro Obata; Shintaro Nomura; Kiyotaka Hammura; Naoko Aoki; Koichi Toyoda; Yoshinobu Aoyagi; Katsumi Midorikawa

doi:10.1117/12.432505

29 June 2001 GaN etching by simultaneous irradiation of KrF excimer laser and F₂ laser

Toshimitsu Akane, Koji Sugioka, Kotaro Obata, Shintaro Nomura, Kiyotaka Hammura, Naoko Aoki, Koichi Toyoda, Yoshinobu Aoyagi, Katsumi Midorikawa

Author Affiliations +

Proceedings Volume 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI; (2001) https://doi.org/10.1117/12.432505
Event: Photonics West 2001 - LASE, 2001, San Jose, CA, United States

Abstract

Etching of GaN by ablation using KrF excimer or F₂ laser has been demonstrated, as well as simultaneous irradiation of F₂ laser with KrF excimer laser to GaN has been explored. The GaN etching process is consisted of the following sequential procedures: laser ablation and an acid chemical treatment for residue removal. Single-pulse irradiation of KrF excimer laser as well as F₂ laser planarizes the etched GaN surface. Multiple KrF irradiation roughens etched GaN surface significantly; however, low intensity F₂ laser simultaneously irradiated with the KrF excimer laser improves the surface roughness. Complete removal of 700 nm-GaN is accomplished by 10 pulses with a laser intensity of approximately 40 x 10⁶ W/cm², besides, very sharp etching sidewall and extremely flat sapphire surface are obtained.

Citation Download Citation

Toshimitsu Akane, Koji Sugioka, Kotaro Obata, Shintaro Nomura, Kiyotaka Hammura, Naoko Aoki, Koichi Toyoda, Yoshinobu Aoyagi, and Katsumi Midorikawa "GaN etching by simultaneous irradiation of KrF excimer laser and F₂ laser", Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); https://doi.org/10.1117/12.432505

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