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14 May 2001 Internal quantum efficiency of AlGaInP microcavity light-emitting diodes
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Detailed study of external quantum efficiency (eta) QE is reported for AlGaInP-based Microcavity Light-Emitting Diodes (MCLEDs). Unlike conventional LED's the extraction efficiency (gamma) ext and far field profile depend on the linewidth of the intrinsic spontaneous emission and wavelength detuning between cavity mode and peak electroluminescence. This dependence makes it difficult to estimate the intrinsic spectrum, hence the performances of MCLED's. By using a non- destructive deconvolution technique, the intrinsic spectra of a MCLED and a reference LED (with the same active regions) could be determined at different current densities. This allowed precise calculation of (gamma) ext for both devices (values close to 11% were found for the MCLED), hence of their apparent internal quantum efficiencies (eta) int. At 55 A/cm2, values of 90% and 40% were determined for the LED and MCLED respectively. In order to explain this difference, we measured (eta) QE for devices with different sizes. From a fitting procedure based on a simple model taking into account the device size, we found out that the radiative efficiencies of LEDs and MCLEDs were close to 90%. We concluded that the low (eta) int of MCLED was due to a bad current injection, and especially to electron leakage current, as confirmed by numerical simulations.
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P. Royo, Ross P. Stanley, Marc Ilegems, Klaus P. Streubel, Michael Moser, and Karlheinz H. Gulden "Internal quantum efficiency of AlGaInP microcavity light-emitting diodes", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001);


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