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23 April 2001 Femtosecond carrier dynamics in GaN
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Proceedings Volume 4280, Ultrafast Phenomena in Semiconductors V; (2001) https://doi.org/10.1117/12.424722
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Ultrafast carrier dynamics in an unintentionally doped GaN sample was investigated using femtosecond transient transmission measurements. Special attention was focused on bandtail states. The transient responses suggest that the shallow bandtail states are extended states and deep bandtail states are localized states. The carriers in shallow bandtail states are found to externally thermalize within 500 fs, at the same rate as the above bandgap carriers. The carriers in deep bandtail states are, on the other hand, dominated by carrier transfer into the lower energy states through phonon assisted tunneling.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi-Kuang Sun, Jian-Chin Liang, Yong-Liang Huang, Yin-Chieh Huang, Xiang-Yang Yu, Stacia Keller, and Steven P. DenBaars "Femtosecond carrier dynamics in GaN", Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); https://doi.org/10.1117/12.424722
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