Hot phonon effects on the ultrafast relaxation of photoexcited electrons in AlN

Mohamed A. Osman

doi:10.1117/12.424725

23 April 2001 Hot phonon effects on the ultrafast relaxation of photoexcited electrons in AlN

Mohamed A. Osman

Proceedings Volume 4280, Ultrafast Phenomena in Semiconductors V; (2001) https://doi.org/10.1117/12.424725
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

The effects of hot phonons on the ultrafast relaxation of photoexcited electrons in AlN has been investigated using ensemble Monte Carlo approach. The electrons are excited using infra-red laser pulses with different densities and energies. The build-up and decay of the hot phonon distribution at several phonon wavevectors is examined. The strong polar optical phonon scattering rates coupled with the short lifetimes of A(LO) leads to quick decay of the hot phonon distributions. Additionally, the rapid electron- electron scattering leads to fast thermalization of the carrier distributions.

Citation Download Citation

Mohamed A. Osman "Hot phonon effects on the ultrafast relaxation of photoexcited electrons in AlN", Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); https://doi.org/10.1117/12.424725

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