CBE growth of GaInNAs quantum wells and dots for long-wavelength lasers

Tomoyuki Miyamoto; T. Kageyama; S. Makino; Yoshihiko Ikenaga; Fumio Koyama; Kenichi Iga

doi:10.1117/12.432570

9 July 2001 CBE growth of GaInNAs quantum wells and dots for long-wavelength lasers

Tomoyuki Miyamoto, T. Kageyama, S. Makino, Yoshihiko Ikenaga, Fumio Koyama, Kenichi Iga

Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432570
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

The GaInNAs is an attractive material for long wavelength lasers on a GaAs substrate and the GaInNAs vertical cavity surface emitting laser (VCSEL) is a viable candidate for low cost and high performance lasers of 1.3micrometers wavelength networks due to excellent temperature characteristics and manufacturing capability of VCSELs. We have successfully grown GaInNAs quantum wells by chemical beam epitaxy and investigated the growth condition toward better crystal quality by employing a radical nitrogen source and thermla annealing. Lasing characteristics of CBE grown 1.2 micrometers GaInNAs lasers are a threshold current density of less than 1kA/cm², and high temperature operation up to 170 degrees C with an excellent slope efficiency change below -0.004dB/K. A characteristic temperature of 270K is also demonstrated. GaInNAs quantum dots were also investigated for the further progress of GaInNAs lasers. The growth of self-organized Qds and a lasing operation at 77K was demonstrated.

Citation Download Citation

Tomoyuki Miyamoto, T. Kageyama, S. Makino, Yoshihiko Ikenaga, Fumio Koyama, and Kenichi Iga "CBE growth of GaInNAs quantum wells and dots for long-wavelength lasers", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432570

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