Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 um

Martin R. Hofmann; Nils Gerhardt; Anke Wagner; Christoph Ellmers; Falko Hoehnsdorf; Joerg Koch; Bernd Borchert; A. Yu. Egorov; Henning Riechert; Wolfgang Stolz; Wolfgang W. Ruehle

doi:10.1117/12.432573

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9 July 2001 Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 μm

Martin R. Hofmann, Nils Gerhardt, Anke Wagner, Christoph Ellmers, Falko Hoehnsdorf, Joerg Koch, Bernd Borchert, A. Yu. Egorov, Henning Riechert, Wolfgang Stolz, Wolfgang W. Ruehle

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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432573
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

The emission dynamics of an optically pumped 1.3 +m (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is investigated. We achieve room-temperature operation at 1285 nm with a low optical pumping threshold and fast emission dynamics: A minimum peak delay of 15.5 ps and a minimum pulse width of 10.5 ps are observed after excitation with 100 fs pulses. Laser operation with picosecond emission dynamics is demonstrated over a wide temperature range from 30 K to 388 K. We explain this extraordinarily large temperature operation range on the basis of measurements of the optical gain in (GaIn)(NAs)/GaAs. We find a gain broadening at elevated carrier densities due to contributions of higher subband transitions.

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Martin R. Hofmann, Nils Gerhardt, Anke Wagner, Christoph Ellmers, Falko Hoehnsdorf, Joerg Koch, Bernd Borchert, A. Yu. Egorov, Henning Riechert, Wolfgang Stolz, and Wolfgang W. Ruehle "Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 μm", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432573

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