Long-wavelength In(Ga)As/GaAs quantum dot electroluminescent devices

Pallab Bhattacharya; Sanjay Krishna; Jasprit Singh; Patrick J. McCann; Khosrow Namjou

doi:10.1117/12.432565

9 July 2001 Long-wavelength In(Ga)As/GaAs quantum dot electroluminescent devices

Pallab Bhattacharya, Sanjay Krishna, Jasprit Singh, Patrick J. McCann, Khosrow Namjou

Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432565
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

The properties of quantum dot intersubband light emitters and the unique carrier dynamics in the quantum dots that lead to the realization of these long wavelength devices are described. The favorable relaxation times can be exploited to realize far IR emission and detection based on intersubband transitions in the dots.

Citation Download Citation

Pallab Bhattacharya, Sanjay Krishna, Jasprit Singh, Patrick J. McCann, and Khosrow Namjou "Long-wavelength In(Ga)As/GaAs quantum dot electroluminescent devices", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432565

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