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9 July 2001 Photonic crystals for optoelectronic devices
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432591
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
We present results on the fabrication and characterization of two and one dimensional photonic crystals for optoelectronic device applications. By using high resolution electron beam lithography 2D and 1D photonic crystals structures are defined on GaAlAs/GaAs and InP/InGaAsP waveguide layers. A crucial step of the patterning is the dry etching, in which structures on a (sub) 100 nm scale with aspect ratios (width to height) of ten or more have to be obtained. We have realized straight waveguides, waveguides with sharp bends, waveguides with build - in cavities as well as lasers with 1D and 2 D photonic crystal mirrors. By using a build in quantum dot layer, optical modes in the passive structures can be investigated. In the InGaAsP as well as in the InGaAs material system ridge waveguide lasers with photonic crystal mirrors have been realized. For the InGaAs system 1D Bragg reflectors with reflectivities above 95 percent have been obtained. These mirrors are essential for mircolasers with active resonator length down to 12 micrometers . These are the shortest edge emitting lasers realized to date.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alfred W. B. Forchel, Martin Kamp, Johann-Peter Reithmaier, Juergen Moosburger, Thomas A. Happ, Siegfried Rennon, Frank Klopf, Ralph Werner, Ursula Oesterle, H. Benisty, and Claude Weisbuch "Photonic crystals for optoelectronic devices", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432591
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