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9 July 2001 Piezoelectric effects in InGaAs quantum well lasers grown on (111)B GaAs substrates
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432568
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
High indium content InGaAs/GaAs laser structures have been grown on (111)B GaAs substrates by Molecular Beam Epitaxy (MBE). The laser devices showed room temperature CW emission, low threshold current densities and emission wavelength up to 1100 nm. The influence of the internal piezoelectric field on the emission properties is studied theoretical and experimentally. A self consistent model was developed in order to simulate the gain and spontaneous emission spectra. Modeling results were compared with measurements of the spontaneous emission spectra, and a good qualitative agreement was obtained. By analyzing these results, we conclude that the piezoelectric field is not completely screened out even for high injection currents, and that the screening level is strongly dependent on the In content. Spontaneous emission measurements in two different configurations (top and edge emission) were compared, yielding similar results for a range of experimental conditions.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luis Borruel, Jose Maria Ulloa, Jorge Julian Sanchez, Beatriz Romero Herrero, Jiro Temmyo, Jose Manuel Garcia Tijero, Jose Luis Sanchez-Rojas, and Ignacio Esquivias "Piezoelectric effects in InGaAs quantum well lasers grown on (111)B GaAs substrates", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432568
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